China’s memory chip ambitions face a steeper climb than commonly believed. According to HBM expert Shim Dae-yong, the technology gap between Chinese memory makers and South Korean giants Samsung and SK hynix exceeds five years—and could widen further due to restricted access to crucial EUV lithography equipment.
Table of Contents
The Korea-China Memory Technology Gap
| Factor | Impact on Gap |
|---|---|
| EUV Access | Critical limitation for 10nm-class DRAM |
| Process Node | Korea at 1b/1c; China limited to 1x/1y |
| Yield Requirements | 80-90% needed for commercial viability |
| HBM Materials | Controlled by Japanese suppliers |
| Co-Development | Decades of partnerships with tech giants |
| Expert Assessment | 5+ years gap, potentially widening |
EUV: The Insurmountable Barrier
Shim, a 26-year SK hynix veteran who led core DRAM technology and early HBM development, identifies extreme ultraviolet (EUV) lithography as the primary bottleneck. While multi-patterning can extend legacy tools through 1a node (as Micron demonstrated), EUV becomes essential from 1b node onward in 10nm-class DRAM production.
Chinese manufacturers currently lack access to ASML’s EUV systems due to export restrictions, forcing them to rely on older deep ultraviolet (DUV) technology. This fundamental constraint creates a structural ceiling on their advancement in cutting-edge DRAM manufacturing.
3D Stacking: Shifting the Bottleneck
Without EUV access, China’s only viable path forward involves advanced 3D stacking technologies. However, Shim notes this approach merely transfers challenges to other critical areas—particularly materials and advanced packaging.
Key HBM materials including underfill and epoxy molding compounds remain controlled by Japanese suppliers like Resonac and Namics. Even Samsung and SK hynix have invested years localizing these inputs, highlighting the time required to develop alternative supply chains.
The Co-Development Advantage
Beyond hardware constraints, Chinese memory makers lack decades of collaborative experience that Korean firms built with Microsoft, Google, Apple, and NVIDIA. These partnerships involve co-developing and validating memory products across new system architectures—a process that cannot be replicated quickly.
This ecosystem advantage provides Korean manufacturers with early insights into future requirements, enabling proactive development aligned with next-generation computing needs.
China’s Memory Sector Growth
Despite these challenges, China’s domestic memory sector shows momentum. Recent reports indicate 13 A-share memory firms projected triple-digit profit growth in 2025, suggesting progress in lower-tier segments while the technology frontier remains distant.
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FAQs
Why can’t China catch up with Korea in memory chips?
Restricted EUV lithography access prevents production of 10nm-class DRAM, creating a 5+ year technology gap.
What is EUV lithography and why does it matter?
Extreme ultraviolet lithography is essential for manufacturing advanced 10nm-class DRAM nodes and beyond.
