South Korea’s tech giant and one of the worlds leading memory module manufacturers, SK Hynix, has officially announced that it has started manufacturing its 1anm DRAM products using the Extreme ultraviolet (EUV) lithography technology. The company’s 8 Gigabit (Gb) LPDDR4 mobile DRAM chip will be the first product to be manufactured.
According to its description, the chip will run at speeds of 4266Mbps, which is the fastest for the LPDDR4 standard. It also stated that the new chip could achieve up to 20% less power consumption. The memory manufacturer has also claimed that EUV enables the 1anm chip to gain 25% more than the chips on the same size wafer and translates it into 25% density improvement.
The predecessors of the 1anm process include the 1x, 1y, and 1z processes; hence this new process is SK Hynix’s fourth iteration of 10 nm technology used for DRAM manufacturing. SK Hynix is positive about the stability in manufacturing the new process and stated that it plans to use it for all its products.
The first DRAM product based on the 1anm process, the 8Gb LPDDR4 chip, is currently in mass production and will hit smartphones in the second half of 2021. The 1anm DRAM technology will also be applied to the DDR5 products made by SK Hynix.
SK Hynix also notes that the product is helping the company accomplish its goal to “reduce carbon dioxide emission as part of its commitment to the environmental, social and governance (ESG) management. With improved productivity and cost competitiveness, the latest 1anm DRAM will not only help secure high profitability but also solidify SK Hynix’s status as a leading technology company with early adoption of the EUV lithography technology for mass production.”
