The launch of 32Gb DDR5 DRAM, Samsung Electronics’ biggest capacity 12nm class product, has been announced. Within the same package size, this device has a capacity that is double that of 16Gb modules. This makes it possible to produce 128GB DRAM modules without using the TSV method. Additionally, it lowers costs and streamlines the manufacturing process. The new DRAM is perfect for the AI era, where data processing and high-performance computing are crucial.
In May, Samsung Electronics began using a 12-nanometer (nm) class manufacturing node to mass produce its double data rate 5 (DDR5) DRAM.
In December of last year, the 16Gb DDR5 DRAM was created, and AMD compatibility was confirmed. The most cutting-edge DRAM currently on the market is the 32Gb DDR5 DRAM. It can handle 60GB at a pace of up to 7.2Gbps, or around one second.
According to Sang Joon Hwang, executive vice president of Samsung Electronics’ memory division, Samsung can develop solutions to achieve 1TB memory modules based on Samsung’s latest 12-nanometer 32Gb memory. He asserts that doing this will assist in meeting the demands of AI in the big data era. Large-capacity DRAM memory is becoming more and more popular in this day and age.
With its high capacity and speed, Samsung’s new DRAM will improve data centres, AI applications, and next-generation computing. Up to 128 GB memory modules are now possible thanks to the 32Gb DDR5 DRAM. Future high-performance computing and data processing will depend on this.
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