Samsung To Unveil 42.5 Gbps 24GB GDDR7 Memory At ISSCC 2025

Samsung’s development of a 42.5 Gbps GDDR7 module is a significant technological advancement, though it remains uncertain whether it will be used in graphics cards. From February 16 to February 20 (2024), the ISSCC (International Solid-State Circuits Conference) special event will be hosted in California; chipmakers will showcase their latest innovations. Among the highlights will be a “Nonvolatile Memory and DRAM” session on February 19, open to the public via the ISSCC website.”

Samsung To Unveil 42.5 Gbps 24GB GDDR7 Memory At ISSCC 2025: A Game-Changer in DRAM

Samsung will also display its GDDR7 DRAM featuring further boosting the speed to an incredible 42.5 Gbps. Designed for the best performance, this 24 GB (3 GB) memory module is more power efficient than previous generations. GDDR7 DRAM is already faster than GDDR6, but the 42.5 Gbps speed is still ahead of current GPU releases. But it may show up in future products, such as NVIDIA’s anticipated RTX 60 series.

The GDDR7 memory on NVIDIA’s Blackwell-based RTX 50 series GPUs will have speeds of up to 28 Gbps, 4 Gbps higher than the 24 Gbps GDDR6 memory of the RTX 4090. In comparison, the 42.5 Gbps speed represents a 77% increase over GDDR6’s 24 Gbps. The current crop of GPUs, such as AMD’s RX 7900 XTX and NVIDIA’s RTX 4090, utilize memory speeds of 20 Gbps and 21 Gbps, respectively. So we probably won’t see 42.5 Gbps GPU speeds for a little while.

Future RTX 5090 based on Blackwell architecture will probably support 28 Gbps memory, with potential improvements in later products. This GPU is likely to be paired with 32 GB of GDDR7 spread across a 512-bit memory bus to deliver a memory bandwidth of up to 2.0 TB/s. With memory speeds approaching 42.5 Gbps, the bandwidth could potentially reach nearly 2.5 TB/s. Additionally, SK Hynix will present its groundbreaking 321-layer 4D NAND, which has recently entered mass production at the same event.

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