Micron has unveiled its own version of UFS 4.0 storage for future smartphones, tablets, and other devices. The next-generation flash storage boasts exceptional read and write speeds that exceed the PCIe Gen 3.0 standard, as well as power-efficiency enhancements.
The new UFS 4.0 memory is built on Micron’s 232-layer NAND technology, which allows the US company can add more bits per square metre, resulting in increased density and reduced power consumption, making it suitable for a wide range of applications.
Increased sequential read and write rates are one of UFS 4.0 storage’s strongest points, and according to Micron’s data, its flash memory outperforms Samsung’s UFS 4.0 chips. According to the business, their NAND memory has sequential read rates of 4,300MB/s and sequential write speeds of 4,000MB/s. Micron claims that with these changes, smartphone apps will launch 15% faster and mobile devices will boot up 20% faster than with UFS 3.1.
Micron has introduced a cutting-edge mobile solution that combines their top-notch UFS 4.0 technology, a specialized low-power controller, advanced 232-layer NAND memory, and adaptable firmware architecture.
This integration results in unparalleled performance, establishing Micron as a leader in providing high-performance and energy-efficient innovations for flagship smartphones, ultimately enhancing the overall user experience.
The new technology is also reported to be 25% more power-efficient than the existing standard, with a 10% write advantage over the competition. Micron provided a different statistic, claiming that customers can download two hours of 4K streaming content in less than 15 seconds, which is twice as fast as the previous-generation standard.
The business is now distributing samples of its UFS 4.0 solutions in 256GB, 512GB, and 1TB capacities to smartphone manufacturers and chipset vendors globally, with scale production planned to begin in the second half of 2023.
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