According to the Korean news site Chosun Biz, SK Hynix, one of the leading DRAM memory manufacturers, has recently entered Intel’s compatibility verification process for DDR5 memory for server-side use with their upcoming DRAM standard. This next step brings the company one step closer to mass production of new products, particularly server-based DRAM.
SK Hynix will be waiting for Intel to complete compatibility testing on the company’s new 10nm class fifth-generation server DRAM.
The verification process will begin next month to determine whether the new DRAM can be used in Intel’s server processors. With Intel maintaining a 90% market share in the server processor market, SK Hynix hopes that their new DRAM will be used with Intel’s processors to see widespread use in servers such as data centres.
In addition, the company achieved the first 10nm class fourth-generation server DRAM, and Intel introduced its new Intel Xeon Scalable Processors, also known as Sapphire Rapids. When questioned about recent collaborations with other companies, a representative declined to comment.
The next step in SK Hynix’s business plan is to launch a 1ß nano DRAM that will go into production in the future. When compared to the company’s higher-cost competition, the new DRAM increases efficiency by 40%.
Samsung Electronics, another memory industry leader, recently released a 16 GB DDR5 DRAM using the 1ß nano process. AMD, Intel’s CPU competitor, was chosen by Samsung to complete compatibility testing.
DRAM manufacturers such as SK Hynix and Samsung have recently raised the prices of memory solutions, including HBM. NVIDIA had requested that SK Hynix expand its HBM3 production capacity for the company. Other vendors, such as Intel, are looking to incorporate HBM3 into their next-generation products. As a result, SK Hynix would be unable to keep up with demand for their products. Having said that, the price of HBM3 memory has risen by up to five times its original cost.
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