The South Korean electronics giant has been in the memory-making business for quite some time now; in fact, it brought some incredible technologies as well. So, it has recently announced that it has expanded its DDR5 DRAM memory portfolio with the industry’s first 512GB DDR5 module based on High-K Metal Gate (HKMG) process technology.
DDR5 is the next stage of the long-running DDR4 RAMs, and it is said that DDR5 delivers more than twice the performance of DDR4 at up to 7,200 megabits per second (Mbps). At first, these RAMs will be a lot more beneficial for high-bandwidth workloads in supercomputing, artificial intelligence (AI), and machine learning (ML) or data analytics.
“Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development,” said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. “By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities, and beyond.”
Utilizing the highly advanced HKMG technology on Samsung’s DDR5 memory helps reduce the leakage and increase performance even though the DRAM structures are getting scaled-down. This new memory will also use approximately 13% less power, making it especially suitable for data centers where energy efficiency is becoming increasingly critical.
By using through-silicon via (TSV) technology, Samsung will be implementing DDR5 stacks eight layers of 16GB DRAM chips to offer a huge capacity of 512GB. Currently, Samsung is sampling different variations of its DDR5 memory product family, and it will not be long enough to see them in the market.
