Samsung is scheduled to demonstrate its next-generation technology to US President Joe Biden when he visits the Korean giant’s Pyeongtaek campus this week, with its 3nm GAA process expected to begin commercial production soon.
According to Yonhap, US President Joe Biden will arrive in Seoul for a three-day visit, which will include a tour of Samsung’s Pyeongtaek factory, which is also the world’s largest and is located 70 kilometers south of Seoul. Samsung’s Vice Chairman Lee Jae-Yong is expected to join Biden on the tour to demonstrate the next-generation mass production process.
Samsung has been rumored to be starting mass production of its 3nm Gate-All-Around (GAA) technology for several months, surpassing Qualcomm’s 4nm node, which was used to mass create the Snapdragon 8 Gen 1. According to one official with knowledge of Samsung’s superior semiconductor production technology, the Korean behemoth’s objective is as follows.
“Samsung could show a 3-nm chip to Biden to emphasize its foundry prowess over Taiwan’s TSMC.”
The benefits of 3nm GAA over Samsung’s 5nm process are significant, according to the company, with up to a 35 percent reduction in size, 30 percent higher performance, and 50 percent power savings. This 3nm GAA technique is most likely intended to compete with TSMC’s 3nm node, but the Taiwanese firm has long dominated the worldwide foundry industry.
TSMC captured 52.1 percent of the global foundry market in the fourth quarter of 2021, while Samsung, in second place, trailed far behind with only 18.3 percent
According to a recent source, the Korean firm was having trouble manufacturing its 3nm GAA process, which had a lower yield rate than its 4nm technology. If Samsung cannot enhance these yields while simultaneously demonstrating that its 3nm GAA process is competitive with TSMC’s 3nm wafers, it may be unable to get orders from Qualcomm and others. Samsung is slated to begin mass production of its advanced chip technology shortly, so we’ll see how it compares to what TSMC has to offer.